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Homray Material Technology CO.,Ltd
Homray Material Technology CO.,Ltd
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6 inch 4H-N SiC wafer substrate Silicon Carbide wafer

6 inch 4H-N SiC wafer substrate Silicon Carbide wafer

Brand Name : Homray Material Technology
Model Number : 6 inch
Place of Origin : China
MOQ : 1
Payment Terms : T/T
Material : silicon carbide
Application : semiconductor
Dimension : 6 inch
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Homray Material Technology provide high quality silicon carbide wafer to electronic and optoelectronic industry. Silicon carbide wafer is a next generation semiconductor material, with unique electrical propertiesand excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , silicon carbide wafer is more suitable for high temperature and high power device. Silicon carbide wafer can be supplied in diameter 2 inch,3 inch,4inch,6inch , both 4-H-N or 6-H-N or 4/6H-Si.


Homray Material Technology offers silicon carbide wafers in different grades.

Standard quality wafers meet high demands for production purposes, research grade substrates are the inexpensive alternative for research and development and for process trials.


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6 inch 4H-N SiC wafer substrate Silicon Carbide wafer Images

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