Homray material’s conductive n-type 4H single crystal SiC
substrates are available in 50.8mm, 76.2mm and 100mm150mm diameter
with a micropipe density down to less than 5 per cm2. The standard
orientation is 4 degrees off-axis. The substrates are normally
supplied with customer specified SiC epitaxial layers.
Silicon carbide substrate 2 inch 4H-N SiC wafer manufacturer china
Homray Material Technology offers silicon carbide wafers in
Standard quality wafers meet high demands for production purposes,
research grade substrates are the inexpensive alternative for
research and development and for process trials.