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Homray Material Technology CO.,Ltd
Homray Material Technology CO.,Ltd
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Silicon carbide substrate 2 inch 4H-N SiC wafer manufacturer china

Silicon carbide substrate 2 inch 4H-N SiC wafer manufacturer china

Brand Name : Homray Material Technology
Model Number : 2 inch
Place of Origin : China
MOQ : 1
Payment Terms : T/T
Material : silicon carbide
Application : semiconductor
Dimension : 2 inch
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Homray material’s conductive n-type 4H single crystal SiC substrates are available in 50.8mm, 76.2mm and 100mm150mm diameter with a micropipe density down to less than 5 per cm2. The standard orientation is 4 degrees off-axis. The substrates are normally supplied with customer specified SiC epitaxial layers.


Silicon carbide substrate 2 inch 4H-N SiC wafer manufacturer china


Homray Material Technology offers silicon carbide wafers in different grades.

Standard quality wafers meet high demands for production purposes, research grade substrates are the inexpensive alternative for research and development and for process trials.


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